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IGBT

IX4352NE Low-side Gate Driver
IX4352NE Low-side Gate Driver

IX4352NE: Low-side Gate Driver for SiC MOSFETs and High-power IGBTs

Littelfuse, Inc.
UCC5880-Q1 Reinforced Isolated Gate Driver
UCC5880-Q1 Reinforced Isolated Gate Driver

Highly Integrated Isolated Real-Time Variable SiC Gate Driver Maximizes EV Driving Range

Texas Instruments has introduced the new highly integrated, functional safety-compliant, isolated gate driver that enables engineers to design more efficient traction inverters and maximize electric vehicle (EV) driving range.
Automotive 750V EDT2 IGBTs
Automotive 750V EDT2 IGBTs

Automotive 750V EDT2 IGBTs in TO247PLUS Package designed for Discrete Traction Inverters

Infineon Technologies AG has launched the new EDT2 IGBTs in a TO247PLUS package that are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. With the automotive micro-pattern
Infineon 650V TRENCHSTOP 5 WR6
Infineon 650V TRENCHSTOP 5 WR6

TRENCHSTOP 5 WR6 Family in TO-247-3-HCC Package for Power Factor Correction and Welding Applications

Infineon Technologies AG introduces the new 650 V TRENCHSTOP 5 WR6 family which comes in a TO-247-3-HCC package and offers a broad portfolio comprising 20A, 30A, 40A, 50A, 60A and 70A current ratings.
Infineon 650 V CoolSic Hybrid IGBT
Infineon 650 V CoolSic Hybrid IGBT

650 V CoolSic Hybrid IGBT for Superior Switching Frequency and Reduced Switching Losses in DC-DC Converters

Infineon Technologies has introduced a 650 V CoolSic Hybrid IGBT portfolio in a discrete package for battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power sup
650V TRENCHSTOP IGBT7 by Infineon Technologies
650V TRENCHSTOP IGBT7 by Infineon Technologies

650V TRENCHSTOP IGBT7 in TO-247 Housing with Excellent EMI Performance for High Humidity Industrial Applications

Infineon Technologies has released TRENCHSTOP IGBT7 technology in a discrete housing for industrial motor drives, power factor correction, photovoltaic and uninterruptible power supplies.
LV100 Type T-Series IGBT Module from Mitsubishi
Mitsubishi's LV100 Type T-Series IGBT Module

New T-series IGBTs from Mitsubishi Electric to Reduce Power Consumption and Size in Renewable Energy Power Supply Systems

Mitsubishi Electric Corporation has introduced the LV100-type T-series insulated gate bipolar transistor (IGBT) module for industrial uses.
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

Toshiba has launched its new IC – GT20N135SRA, a 1350V discrete IGBT to be used in voltage resonance circuits in tabletop IH cookers, microwave ovens, and other home appliances.
FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications
FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications

FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications

Infineon Technologies has introduced the new FF900R12ME7_B11 module with emitter controlled 7th generation diode for the application of variable speed drives.
FGA15N120 IGBT
FGA15N120 IGBT

FGA15N120 IGBT

The FGA15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A.  It also has a very low collector emitter saturation voltage of 1.9V and low switching losses.