Renewable Energy
Aratas' G3VH SiC MOSFET relay is a next-generation high-voltage switching component leveraging Silicon Carbide technology to deliver 1,800V/3,300V load voltage, low ON resistance, and high-speed…
TDK-Lambda DDSM Programmable DIN-Rail DC-DC Converters Deliver 120 W and 240 W
The TDK-Lambda DDSM series is a programmable, isolated DC-DC converter family offering 120W and 240W models, 12–48V input, 5–55V output, DIN-rail mounting, digital monitoring, and flexible power conversion for industrial applications.
Nuvoton Releases Mass Production Launch of New Industrial BM-ICs
Kyoto, Japan, February 12, 2025 - Nuvoton Technology Corporation Japan (NTCJ) has developed new industrial 17-cell BM-ICs “KA49701A” and “KA49702A” for 48V batteries. Mass production starts from April 2025.
How to Optimize Solar Cells For Indoor Use?
We all know that solar panels are used to generate clean electricity, which can be utilized in our daily activities by either directly converting DC to AC or storing it in a battery.
Next-Gen Silicon Carbide Technology for High-Performance Systems
Infineon Technologies has introduced the latest generation of silicon carbide (SiC) MOSFET trench technology, known as the CoolSiC
Compact 600V Super Junction for Efficient Power Solutions in Small Lighting, Motors, and Automation
ROHM introduces a series of compact 600V Super Junction MOSFETs (R6004END4, R6003KND4, R6006KND4, R6002JND4, and R6003JND4) in the SOT-223-3 package, designed for applications such as small lighting power supplies, pumps, and motors.
New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.
