Renewable Energy
Next-Gen Silicon Carbide Technology for High-Performance Systems
Infineon Technologies has introduced the latest generation of silicon carbide (SiC) MOSFET trench technology, known as the CoolSiC
Compact 600V Super Junction for Efficient Power Solutions in Small Lighting, Motors, and Automation
ROHM introduces a series of compact 600V Super Junction MOSFETs (R6004END4, R6003KND4, R6006KND4, R6002JND4, and R6003JND4) in the SOT-223-3 package, designed for applications such as small lighting power supplies, pumps, and motors.
New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.