IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A.
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.
Vishay Intertechnology has released a new 30 V N-Channel MOSFET, SISS52DN that is capable of delivering high power density and efficiency for isolated and non-isolated topologies.
The STMicroelectronics launched VIPer26K high-voltage converter comprises a 1050V avalanche-rugged N-channel power MOSFET that allow offline power supplies to combine a wide input-voltage range with the advantages of a simplified design.
The STP80NF70 is an N-channel Power MOSFET from ST Microelectronics. It has a drain to source voltage of 68V and a continuous collector current of 98A with low gate threshold voltage of 2-4V.