GaN FET
Renesas Electronics Corporation has launched a new line of plastic-packaged radiation-hardened devices for satellite power management systems.
High Switching Frequency Rad-Hard GaN Transistors for Power Conversion Solution in Critical Spaceborne Applications
Efficient Power Conversion (EPC) has added EPC7014, a 60 V, 340 mΩ, 4 APulsed, rad-hard eGaN FET to a new family of radiation-hardened gallium nitride transistors and integrated circuits.