FET

ROHM Semiconductor announces the new BD28C5xFJ-LB series offering external FET-type controller integrated circuits (ICs) with PWM current control mode.

Diodes Incorporated has introduced the ZXMS81045SPQ, its first protected, automotive-compliant, high-side IntelliFET. This device is capable of delivering high power from a small footp

The TL071H devices are the next-generation versions of the industry-standard devices.

UniteSiC has expanded its FET portfolio with the introduction of six new 650V and 1200V options that are available in 30, 40, 80 and 150mΩ versions.

Nexperia has introduced its second-generation 650V power GaN FET device family with RDS(on) performance down to 35 mΩ (typical).

Nexperia has introduced the Repetitive Avalanche Application-Specific FET (ASFET) portfolio that can be used to control automotive inductive loads such as solenoids and actuators.

The new automotive GaN FETs from Texas Instruments are 650-V and 600-V gallium nitr

Nexperia has introduced the new Application-Specific FETs (ASFETs) that feature MOSFETs with optimized parameters for specific applications.

United SiC has introduced a series of UF3C/SC SiC FETS that are improved to provide higher switching speeds, higher efficiency, and lower losses w

The UnitedSic introduced UF3C/UF3SC series SiC FETs, which is designed based on a unique cascade configuration to provide higher switching speeds, higher efficiency, and lower losses.