Renesas Expands GaN Portfolio with First Low-Voltage GaN FETs

Renesas Electronics Corporation has expanded its Gallium Nitride (GaN) portfolio into low-voltage applications with the introduction of its first family of 100V enhancement mode (E-mode) GaN-based discrete power transistors. These new low-voltage GaN FETs, including part numbers RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, and RTP100E1P2G1FL-DSC, are designed to deliver ultra-fast switching speeds and enhanced thermal performance. They are particularly suited for efficiency-critical, high-power-density applications across various sectors.

These GaN FETs achieve industry-leading hard- and soft-switching figure-of-merit (FOM) performance, offering up to 35% lower hard-switching FOM and up to 63% lower soft-switching FOM compared to similar GaN devices. A key differentiator is their silicon-compatible footprint, which facilitates easy integration into existing designs, simplifying the transition from silicon MOSFET layouts. This compatibility, combined with their performance benefits, makes them ideal for modern power conversion challenges.

The new GaN devices are crucial for evolving infrastructure, such as AI data centers and industrial systems transitioning to 800VDC power distribution and 48V bus architectures. By enabling megahertz-class switching, they allow for smaller magnetics, increased power density, and improved overall efficiency. Their use in 800V high-voltage direct current (HVDC) power architectures simplifies design, significantly reducing passive component size, switching losses, and cooling requirements, ultimately leading to better efficiency, reduced thermal management needs, and lower energy and Bill of Materials (BOM) costs.

Specifications

Key Features

• 100V enhancement mode (E-mode) GaN-based discrete power transistors.
• Ultra-fast switching speeds with low total gate charge (Qg) and output charge (Qoss).
• Enhanced thermal performance with available bottom- and dual-side cooling configurations.
• Industry-leading hard- and soft-switching figure-of-merit (FOM) performance, with up to 35% lower hard-switching and up to 63% lower soft-switching FOM than comparable GaN devices.
• Zero reverse recovery (Qrr = 0) eliminates energy losses for immediate switching efficiency gains.
• Silicon-compatible footprint and multiple standard MOSFET-compatible packages for easy adoption and migration from existing designs.
• Wide RDS(on) range (5 mΩ-1.2 mΩ) enables scalability across various power levels and applications.
• Achieves 1 to 3% higher efficiency over silicon-based designs by eliminating Qrr loss.
• Provides a drastic 40 to 70% reduction in switching losses at the system level.
• Doubles power density by reducing switching energy per cycle and supporting high-frequency operation.
• Enables a smaller system footprint by allowing higher switching frequencies, which reduces the size of magnetic and passive components.
• Optimized thermal management reduces fan and active cooling requirements, cutting system complexity and BOM cost.
• Contributes to sustainability objectives through lower total energy consumption per power stage and reduced system footprint.

Applications

• AI data centers
• Humanoid robotics
• Factory automation
• Industrial motor drives
• Power tools
• Solar microinverters
• Synchronous rectification
• Multiphase buck conversion

Availability

Renesas Electronics Corporation’s new 100 V enhancement-mode (E-mode) GaN power transistors are available now, together with corresponding evaluation boards, in FCLGA and FCLGA-DSC packages. The product family includes the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC devices, designed for high-efficiency, high-power-density applications such as AI data centers, robotics and industrial power systems.