High-Performance 650V and 1200V D2PAK-7L Compact SiC FETs for Reliable Switching Operations
UniteSiC has expanded its FET portfolio with the introduction of six new 650V and 1200V options that are available in 30, 40, 80 and 150mΩ versions. Housed in the industry-standard D2PAK-7L surface mount package, these new devices ate suitable for applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV on-board chargers and DC-DC converters.
The new SiC FETs support heightened switching speeds along with a Kelvin source connection, improving gate drive return performance; they also offer industry-leading thermal capabilities. Along with the ability to be attached to conventional PCBs and complex insulated metal substrate(IMS) arrangements, these new devices can exhibit excellent creepage and clearance figures of 6.7mm and 6.1mm respectively.
Pricing (1000-up, FOB USA) for the new 650V D2PAK-7L SiC FETs range from $3.27 for the UF3C065080B7S to $7.54 for the UF3SC065030B7S. For the 1200V D2PAK-7L devices, prices range from $3.10 for the UF3C120150B7S to $10.91 for the UF3SC120040B7S.
Features of UF3SC120040B7S SiC FETs
- On-resistance RDS(on): 35mΩ (typ)
- Operating temperature: 175°C (max)
- Excellent reverse recovery: Qrr = 358nC
- Low body diode VFSD: 1.5V
- Low gate charge: QG = 43nC
- Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive
Note: More Technical information can be found in the UF3SC120040B7S Datasheet linked at the bottom of this page and on the product page of High-Performance SiC FETs.
