ON Semiconductors has introduced 1200V full silicon carbide (SiC) MOSFET 2-PACK modules pair (NXH010P120MNF1 and NXH006P120MNF2) with superior switching performance and enhanced thermals for offering reliability and robustness in the electric vehicle (EV) market.
Microchip Technology has introduced the 700V and 1200V SiC Schottky Barrier Diode (SBD) powered devices for helping designers to deliver automotive quality standards across a wide range of vol
STMicroelectronics has introduced the L9963 BMS controller, a new battery management technology that can increase the reliability, safety, driving range, and cost-effectiveness of electric vehicles (EVs).
Featuring ferrite core technology and a low 15.4 mm profile, Vishay Intertechnology has introduced a new IHDF edge- wound through-hole inductor with rated current up to 72A and saturation currents up to 230A for industrial and military applications