Renesas's new RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, and RTP100E1P2G1FL-DSC 100V GaN FETs deliver ultra-fast switching and high efficiency for AI data centers and robotics.
Renesas TP65H020G4PLSGBD 650V GaN Dual-Side Cooled Device
Renesas TP65H020G4PLSGBD is the industry's first 650V GaN device with dual-side cooling in an 8x8mm package, engineered for high-density power conversion in megawatt-scale AI data centers.
Integrated GaN HEMT Bridge Devices for versatile power applications
The MJE13001 is a common BJT NPN switching transistor that is found in lamp ballasts and (cheap) phone chargers because of its high breakdown voltage and current capacity.
The D882 is a medium power NPN transistor that features a high collector-emitter breakdown voltage and medium current carrying capability. It can also be mounted on a heatsink using the screw hole in the SOT-32 package.
The BC488 is a PNP Transistor in a TO-92 package, that has a VCE of -60V and a collector current of -1000mA or -1A. It can be used as a small signal switching transistor.