EcoGaN Power Stage ICs with GaN HEMTs and Gate Drivers for Component Size Reduction and Power Loss
ROHM has introduced the BM3G0xxMUV-LB series, a line of power stage ICs, integrating 650V Gallium Nitride High Electron Mobility Transi
HEMT
ROHM Starts Mass Production of High-Performance 650V GaN HEMTs
ROHM has announced the mass production of two new Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), the GNP1070TC-Z and GNP1150TCA-Z.
Fully-Matched IGT5259L50 GaN/SiC Transistor Offers 50W at 5-6 GHz
Integra has announced a fully-matched, GaN/SiC transistor IGT5259L50 which offers 50W at 5-6 GHz and is designed for pulsed C-Band Radar applications.
150V GaN HEMT Devices with 8V Gate Breakdown Voltage for Power Supply Circuits in Industrial and Communication Equipment
ROHM has introduced the highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.
CoolGaN 600V e-mode HEMT for Better Efficiency and Reliability in Telecom Power Applications
Infineon technologies have provided CoolGaN to deliver ultimate efficiency and reliability to telecom power supply systems. Available in the DFN8x8 package, the CoolGan 600V e-mode HEMT in the Delta’s DPR
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