SiRS5700DP 150 V Power MOSFET: Enhanced Efficiency and Power Density for Telecom and Industrial Applications
Vishay Intertechnology has launched the SiRS5700DP, a 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK SO-8S package. The device offers higher efficiency and power density by providing an on-resistance of 5.6 mΩ and an on-resistance times gate charge FOM of 336 mW*nC, making it highly efficient for power conversion. It is ideal for applications such as telecom power supplies, DC/DC converters, synchronous rectification, and computing systems like servers and supercomputers.
The SiRS5700DP also delivers a 179% increase in continuous drain current capability and a 62.5% reduction in thermal resistance (RthJC) compared to previous-generation devices. Its compact 6 mm x 5 mm footprint is fully compatible with the standard PowerPAK SO-8, ensuring ease of integration. Additionally, the MOSFET is RoHS-compliant, halogen-free, and meets IPC-9701 standards for reliable performance in temperature cycling, making it a robust and versatile choice for various industrial and computing environments.
Features of n-Channel MOSFET SiRS5700DP
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Leadership RDS(on) minimises power loss from conduction
- Rg and UIS tested
- Enhance power dissipation and lower RthJC
Applications of n-Channel MOSFET SiRS5700DP
- Synchronous rectification
- DC/DC converters
- OR-ing and hot swap switch
- Power supplies
- Motor drive control
- Battery management
