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IGBT

650V TRENCHSTOP IGBT7 by Infineon Technologies
650V TRENCHSTOP IGBT7 by Infineon Technologies

650V TRENCHSTOP IGBT7 in TO-247 Housing with Excellent EMI Performance for High Humidity Industrial Applications

Infineon Technologies has released TRENCHSTOP IGBT7 technology in a discrete housing for industrial motor drives, power factor correction, photovoltaic and uninterruptible power supplies.
LV100 Type T-Series IGBT Module from Mitsubishi
Mitsubishi's LV100 Type T-Series IGBT Module

New T-series IGBTs from Mitsubishi Electric to Reduce Power Consumption and Size in Renewable Energy Power Supply Systems

Mitsubishi Electric Corporation has introduced the LV100-type T-series insulated gate bipolar transistor (IGBT) module for industrial uses.
IGBT  – Symbol, Construction, and Working
IGBT – Symbol, Construction, and Working

A Brief Overview of IGBT - Insulated Gate Bipolar Transistor

The most popular and commonly used power electronic switch devices are the Bipolar Junction Transistor BJT and the MOSFET.
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

Toshiba has launched its new IC – GT20N135SRA, a 1350V discrete IGBT to be used in voltage resonance circuits in tabletop IH cookers, microwave ovens, and other home appliances.
FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications
FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications

FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications

Infineon Technologies has introduced the new FF900R12ME7_B11 module with emitter controlled 7th generation diode for the application of variable speed drives.
FGA15N120 IGBT
FGA15N120 IGBT

FGA15N120 IGBT

The FGA15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A.  It also has a very low collector emitter saturation voltage of 1.9V and low switching losses.  
FGA25N120 IGBT
FGA25N120 IGBT

FGA25N120 IGBT

The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. The IGBT can switch 1200V with a current rating of upto 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs.
IEWS20R5135IPB – Protected IGBT with built-in driver IC for Induction Heating Applications
IEWS20R5135IPB – Protected IGBT with built-in driver IC for Induction Heating Applications

IEWS20R5135IPB – Protected IGBT with built-in driver IC for Induction Heating Applications

Infineon Technologies has launched the new F-Series Protected IGBTs with TRENCHSTOP feature. This new IGBT includes built-in logic functionality and a dedicated driver IC which is programmable by the user.
FGA25N120ANTD 1200V NPT Trench IGBT
FGA25N120ANTD 1200V NPT Trench IGBT

FGA25N120ANTD 1200V NPT Trench IGBT

FGA25N120ANTD Pin Configuration Pin Name Description G Gate, Controls the ON-OFF of the transistor