IGBT
A Brief Overview of IGBT - Insulated Gate Bipolar Transistor
The most popular and commonly used power electronic switch devices are the Bipolar Junction Transistor BJT and the MOSFET.
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits
Toshiba has launched its new IC – GT20N135SRA, a 1350V discrete IGBT to be used in voltage resonance circuits in tabletop IH cookers, microwave ovens, and other home appliances.
FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications
Infineon Technologies has introduced the new FF900R12ME7_B11 module with emitter controlled 7th generation diode for the application of variable speed drives.
FGA15N120 IGBT
The FGA15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A. It also has a very low collector emitter saturation voltage of 1.9V and low switching losses.
FGA25N120 IGBT
The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. The IGBT can switch 1200V with a current rating of upto 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs.
IEWS20R5135IPB – Protected IGBT with built-in driver IC for Induction Heating Applications
Infineon Technologies has launched the new F-Series Protected IGBTs with TRENCHSTOP feature. This new IGBT includes built-in logic functionality and a dedicated driver IC which is programmable by the user.
FGA25N120ANTD 1200V NPT Trench IGBT
FGA25N120ANTD Pin Configuration
Pin Name
Description
G
Gate, Controls the ON-OFF of the transistor