New Gen V Power MOSFET with Source Flip Technology Offers Enhanced Thermal Performance for Industrial Applications
Vishay Intertechnology has introduced a new 30 V n-channel TrenchFET Gen V power MOSFET SiSD5300DN that delivers increased power density and enhanced thermal performance for industrial, computer, consumer, and telecom applications. Featuring source flip technology in the 3.3 mm by 3.3 mm PowerPAK 1212-F package, this new MOSFET provides on-resistance of 0.71 mΩ at 10 V and on-resistance times gate charge, a critical figure of merit (FOM) for MOSFETs used in switching applications of 42 mΩ*nC. Occupying the same footprint as the PowerPAK 1212-8S, the device offers 18 % lower on-resistance to increase power density, while its source flip technology reduces thermal resistance by 63 °C/W to 56 °C/W. In addition, the SiSD5300DN’s FOM represents a 35 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
PowerPAK 1212-F minimizes the extent of the switching area, which helps to reduce the impact of trace noise and the center gate design also simplifies parallelization of multiple devices on a single-layer PCB. The source flip PowerPAK1212-F package of the SiSD5300DN is especially suitable for applications such as secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products include welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.
Features
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TrenchFET Gen V power MOSFET
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Very low RDS x Qg figure-of-merit (FOM)
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Source flip technology, enhance thermal performance
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100 % Rg and UIS tested
Applications
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DC/DC converter
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Synchronous rectification
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Battery management
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Oring and load switch
Availability
Samples and production quantities of the SiSD5300DN are available now, with lead times of 26 weeks.
