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New Automotive-Grade Silicon Carbide Schottky Diodes with High Power Density and Reduced EMI for UPS and Photovoltaic Inverters

Silicon Carbide Schottky Diodes from Nexperia
Silicon Carbide Schottky Diodes from Nexperia

Nexperia has expanded its wide bandgap semiconductor offering by introducing a new family of high-performance Silicon Carbide (SiC) Diodes that initially target industrial and consumer applications including Switch Mode Power Supply (SMPS), AC-DC and DC-DC converters, battery charging infrastructure, Uninterruptible Power Supply (UPS), and Photovoltaic inverters. This new industrial-grade with 650 V repetitive peak reverse voltage (VRRM) and 10 A continuous forward current (IF), designed to combine ultra-high performance and high efficiency with low energy loss in power conversion applications. Moreover, these diodes are suitable for a wide range of automotive applications like On-Board Chargers (OBC), inverters, and high voltage DC-DC converters.


This family of diodes provides the benefit of a high-voltage compliant real 2-pin (R2P) package with higher creepage distance and is available in a choice of surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) devices. The SiC Schottky diode encapsulated in a through-hole power plastic package offers temperature-independent capacitive turn-off and zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF).



  • Zero forward and reverse recovery

  • Temperature independent fast and smooth switching performance

  • Outstanding figure-of-merit (Qc x VF)

  • High IFSM capability

  • High power density

  • Reduced system cost

  • System miniaturization

  • Reduced EMI



  • Switch Mode Power Supply (SMPS)

  • AC-DC and DC-DC converter

  • Battery charging infrastructure

  • Server and telecom power supply

  • Uninterruptible Power Supply (UPS)

  • Photovoltaic inverters



Samples of industrial-grade 650 V, 10 A SiC Schottky diode are now available.

Component Datasheet

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