Microchip Expands Space Power Portfolio with New Radiation-Tolerant GaN Point-of-Load Converter
Microchip Technology has introduced the POL-05-20S-T, a radiation-tolerant Point-of-Load (POL) converter designed to meet the demanding power requirements of space processing applications. This new device leverages Gallium Nitride (GaN) power devices to deliver up to 20A of output current, offering high efficiency and power density in a compact form factor.
The POL-05-20S-T is supplied in a 25g surface-mount package, measuring 1.51” x 1.51” x 0.45”. By delivering 20A in this footprint, the converter helps engineers manage the size, power, and energy constraints of increasingly capable onboard processing systems. Its GaN-based design is specifically engineered to provide a combination of high efficiency, high power density, and continuous current capability essential for challenging space power applications.
This converter is particularly suited for high-current, fast-transient applications, such as powering the core voltage rails of FPGAs, microcontrollers, ASICs, and other processing-intensive digital loads. It integrates a synchronous buck topology with current-mode control to ensure fast current transient response and stable operation. With a wide input range of 4.75V to 13.2V and an adjustable output from 0.7V to 5V, the device offers significant flexibility for various power rails and system architectures.
Source Link: Press Release
Specifications
| Product | Type | Output Current | Input Voltage Range | Output Voltage Range | Package Dimensions | Package Weight | Total Ionizing Dose (TID) | Single Event Effects (SEE) LET | Operating Temperature |
| POL-05-20S-T | Radiation-tolerant POL converter | 20A | 4.75V to 13.2V | 0.7V to 5V | 1.51” x 1.51” x 0.45” | 25g | 50 krad | 43 MeV·cm²/mg | 55°C to +100°C |
Key Features
- Radiation-tolerant design, with electrical parameters specified up to 50 krad Total Ionizing Dose (TID) and characterized for Single Event Effects (SEE) up to 43 MeV·cm²/mg Linear Energy Transfer (LET).
- Utilizes Gallium Nitride (GaN) power devices for high efficiency and power density.
- Delivers up to 20A of continuous output current.
- Compact surface-mount package measuring 1.51” x 1.51” x 0.45” and weighing 25g.
- Wide input voltage range of 4.75V to 13.2V.
- Adjustable output voltage from 0.7V to 5V.
- Employs a synchronous buck topology with current-mode control for fast transient response and stable operation.
- Operates reliably across a wide temperature range from −55°C to +100°C at full load.
- Includes comprehensive protection features: remote sensing, undervoltage and overvoltage protection, soft start, an enable pin, and a power-good indication pin.
- Supports output droop regulation for tight voltage regulation under high-current loads.
Applications
- New space applications.
- Traditional space applications.
- Core voltage rails of FPGAs.
- Core voltage rails of microcontrollers.
- Core voltage rails of ASICs.
- Other processing-intensive digital loads.
- High-current, fast-transient power delivery for space processing systems.
Availability
Microchip Technology announced that its POL-05-20S-T radiation-tolerant gallium nitride (GaN) point-of-load converter is available in production quantities. The device can be ordered directly from Microchip Technology or through its sales representatives and authorized worldwide distributors. Designed for space and other radiation-sensitive applications, the converter delivers up to 20 A of continuous output current, with an input voltage range of 4.75 V to 13.2 V and an adjustable output voltage of 0.7 V to 5 V. It is suitable for powering FPGAs, microcontrollers, ASICs and other high-performance digital processing devices in demanding space environments.
