Skip to main content

Fourth-Gen 650 V E Series Power MOSFET for High Power Ratings, Density, and Efficiency Gain

SiHP054N65E Mosfet
SiHP054N65E Mosfet

Vishay Intertechnology, Inc. has introduced the fourth-generation 650 V E Series Power MOSFET, SiHP054N65E to enhance efficiency and power density. The MOSFET targets power factor correction (PFC) and DC/DC converter blocks, catering to applications like servers, edge computing, solar inverters, and more.

The power MOSFET has low effective output capacitances (Co(er) and Co(tr)) of 115 pF and 772 pF, respectively. The resulting FOM of resistance times Co(er) is 5.87 Ω*pF.  They come in the TO-220AB package, with increased dv/dt ruggedness, and RoHS compliance, halogen-free. The device can withstand overvoltage transients in avalanche mode through 100% UIS testing.



  • 4th generation E series technology
  • Low figure-of-merit (FOM) Ron x Qg
  • Low effective capacitance (Co(er))
  • 48.2% lower on-resistance
  • 59% reduction in resistance times gate charge
  • Built on advanced E Series super junction technology
  • On-resistance of 0.051 Ω at 10 V
  • Low gate charge down to 72 nC
  • Reduced FOM of 3.67 Ω*nC



  • Server and telecom power supplies
  • Switch mode power supplies (SMPS)
  • Power factor correction power supplies (PFC)
  • DC/DC converter blocks
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • High-intensity discharge lamps
  • Fluorescent ballast lighting
  • Welding equipment
  • Induction heating systems
  • Motor drives
  • Battery chargers
Component Datasheet

Related Post


Join 20K+subscribers

We will never spam you.

* indicates required

Be a part of our ever growing community.