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EF Series Power MOSFET with Fast Body Diode Enables High Power Density while Lowering Conduction and Switching Losses

EF Series Power MOSFET
EF Series Power MOSFET

Vishay Intertechnology, Inc has introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low-profile PowerPAK 10 x 12 package that provides high efficiency and power density for telecom, industrial, and computing applications. The new Vishay Siliconix n-channel SiHK045N60EF slashes on-resistance by 29% while delivering a 60% lower gate charge and supports all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high-tech equipment. Typical applications of this device include edge computing and data storage; UPS; high-intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.


Built on Vishay’s latest energy-efficient E Series super junction technology, the SiHK045N60EF’s low typical on-resistance of 0.045 Ω at 10 V is 27 % lower than devices in the PowerPAK 8 x 8 package. The result is a higher power rating for applications ≥ 3 kW, while the device’s low 2.3 mm profile increases power density. In addition, the MOSFET offers ultra-low gate charge down to 70 nC. The resulting FOM of 3.15 Ω*nC is 2.27 % lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 98 % peak efficiency in telecom power supplies.


Moreover, for improved switching performance in zero voltage switching (ZVS) topologies such as LLC resonant converters, the SiHK045N60EF provides low effective output capacitances Co(er) and Co(tr) of 171 pf and 1069 pF, respectively. The device’s Co(tr) is 8.79 % lower than the closest competing MOSFET in the same class, while its fast body diode provides a low Qrr of 0.8 μC for increased reliability in bridge topologies.



  • 4th generation E series technology

  • Low figure-of-merit (FOM) Ron x Qg

  • Low effective capacitance (Co(er))

  • Reduced switching and conduction losses

  • Avalanche energy rated (UIS)



  • Server and telecom power supplies

  • Switch mode power supplies (SMPS)

  • Power factor correction power supplies (PFC)

Component Datasheet

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