STP80NF70 N-Channel MOSFET

The STP80NF70 is an N-channel Power MOSFET from ST Microelectronics. It has a drain to source voltage of 68V and a continuous collector current of 98A with low gate threshold voltage of 2-4V. It also has low internal resistance and low input capacitance making it suitable for high-efficiency switching applications.

Pin Configuration

Features

• N-Channel Power MOSFET
• Low Input Capacitance and gate charge
• Drain to Source Voltage VDS : 68V @ VGS=0
• Continuous Drain Current (ID):  98A
• Gate threshold voltage (VGS-th): 2V to 4V
• Drain Source Resistance (RDS) is <0.0098 Ohms
• Rise time and fall time is 60nS and 75nS
• Available in To-220 package

Note: Complete technical details can be found at the datasheet linked at the bottom of the page

Alternatives for STP80NF70 

IRF3710, 80NF03

Other N-Channel MOSFETs

BS170N, IRF3205, 2N7000, IRF1010E, IRF540N

About STP80NF70

The STP80NF70 is an N-Channel Power MOSFET which can switch loads upto 68V. The Mosfet could switch loads that consume upto 98A, it can turned on by provide a gate threshold voltage of 2-4 V across the Gate and Source pin. The advantage of this MOSFET is its low on-state resistance of only 0.0098 Ohms and low gate input capacitance making it suitable for high efficiency switching devices. However the trade off seems to be with the switching speed, it has longer rise and fall time making it not the best choice for high speed switching devices.  If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.

Though the mosfet has a very low gate threshold voltage of 4V it does not conduct high current in this mode. Hence it is not a logic level MOSET and hence cannot be used in 3.3V or 5V designs with good efficiency.  The maximum gate voltage is 20V, but 12V should be decent enough to operate the MOSFET in its rated voltage and current. The below graph from datasheet shows the output characteristics of the MOSFET. 

As you can see, when the gate voltage is only 5V, the MOSFET can switch a drain current of maximum 40A when drain to source voltage is around 18V. The current rating increases as the gate source voltage increase as show in the graph. Also for lower gate voltage the MOSFET will be closed only partially thus creating higher on-state resistance. You can refer the datasheet at the bottom of this page for more details 

Applications

• Switching high power devices
• Inverter Circuits
• DC-DC Converters
• Control speed of motors
• LED dimmers or flashers
• High Speed switching applications

2D model of the component

If you are designing a PCB or Perf board with this component then the following picture from the STP80NF70 Datasheet will be useful to know its package type and dimensions.