Infineon SPOC™ +2 Wire Guard 12V Automotive eFuse for Smart Vehicle Power Protection
The rapid expansion of satellite constellations, deep-space exploration, and next-generation New Space programs is driving demand for power electronics that can deliver exceptional efficiency while withstanding the harsh conditions of space. Traditional silicon-based solutions have served the industry for decades, but the increasing need for higher power density, lower switching losses, and improved reliability is accelerating the adoption of Gallium Nitride (GaN) technology. Recognizing this industry shift, Infineon has introduced the RIC70115, a radiation-hardened GaN HEMT gate driver specifically engineered for satellite and other high-reliability aerospace applications.
The RIC70115 is designed to simplify the transition from conventional silicon architectures to advanced GaN-based power systems without compromising operational safety or long-term reliability. Supporting both silicon MOSFETs and GaN HEMTs in high-side and low-side configurations, the device offers engineers greater flexibility when designing power conversion systems for spacecraft, payloads, and mission-critical electronics. Its integrated protection mechanisms, differential input architecture, and regulated gate drive significantly reduce design complexity while improving overall system robustness.
What sets the RIC70115 apart is its ability to operate reliably in extreme radiation environments encountered in Low Earth Orbit (LEO), Geostationary Earth Orbit (GEO), and deep-space missions. The driver is qualified to withstand Total Ionizing Dose (TID) exposure up to 100 krad(Si) and is characterized for Single Event Effects (SEE), ensuring dependable operation throughout extended mission lifetimes. Combined with its wide operating temperature range and integrated low-dropout regulator, the device enables aerospace designers to build more compact, efficient, and reliable satellite power systems for future generations of space technology.
Specification
| Product | Function | Supply Voltage | Current Limitation | RDS(on) | Protection Features | Package Type | Package Dimensions |
| SPOC™ +2 Wire Guard 12V Automotive eFuse | Intelligent High-Side Power Switch (eFuse) | 3V – 28V (12V automotive systems) | Programmable current limitation (device dependent) | Ultra-low RDS(on), variant dependent | Overcurrent Protection, Overtemperature Protection, Short-Circuit Protection, Overvoltage Protection, Reverse Battery Protection, Open Load Detection, Diagnostic Feedback | PG-TSDSO-14 / PG-TSDSO-24 (variant dependent) | Package dimensions vary by device/package |
Key Features
- Radiation-hardened GaN HEMT gate driver for space applications
- Compatible with both Silicon MOSFETs and GaN HEMTs
- Supports high-side and low-side gate drive configurations
- Integrated 4.8 V Low Dropout (LDO) regulator
- Truly Differential Input (TDI) logic for superior noise immunity
- Independent Miller Clamp to prevent parasitic turn-on
- Wide input supply voltage range (4.75 V–15 V)
- Reduced external component count
- High switching efficiency with lower power losses
- Qualified for harsh radiation environments
- Military-grade operating temperature support
- Designed for long mission reliability in aerospace systems
Applications
- Satellite power management systems
- New Space satellite constellations
- Spacecraft power distribution units (PDU)
- Power conditioning units (PCU)
- High-efficiency DC-DC converters
- Satellite payload electronics
- Aerospace power conversion systems
- Military and defense electronics
- High-reliability avionics
- Deep-space exploration missions
