High-Efficiency 650V & 1200V SiC Schottky Diodes with Low Loss and Fast Switching for Power Applications
16 new silicon carbide Schottky diodes are announced by Vishay Intertechnology to boost the speed and efficiency for high frequency power applications. They work with both 650V and 1200V, which makes them great for solar power systems , EV charges, industrial UPS , and telecom power supplies.
These diodes have low forward voltage drop (1.36V), this means less wasted heat, allowing power systems to operate cooler and more efficiently. They also feature low capacitive charge (QC), which enables faster switching speeds—a critical factor in high-frequency applications like AC/DC and DC/DC converters. Compared to the traditional silicon diodes, these SiC diodes recover faster after switching, minimizing wasted energy and improving performance.
Vishay’s new silicon diodes can perform in high temperatures up to 175°C, making them more reliable in demanding conditions. And they come in an industry-standard SOT-227 package, meaning they can easily replace existing components in power systems without redesigning circuits.
Features of SOT-227 Silicon Carbide Schottky Diode
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Low Forward Voltage Drop: Minimizes conduction losses, improving efficiency.
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Fast Reverse Recovery: Reduces switching losses and EMI.
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High Temperature Operation: Reliable performance up to 175°C.
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Low Capacitive Charge (QC): Enables high-speed switching performance.
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Standard SOT-227 Package: Drop-in replacement for easy integration.
Applications of SOT-227 Silicon Carbide Schottky Diode
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Solar Power Systems.
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EV Charging Stations
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Industrial UPS Systems
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Telecom Power Supplies
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DC/DC Converters
