Latest-Generation Silicon-Carbide Power Devices for Fast-Charging EV Infrastructures and Industrial Applications
STMicroelectronics has introduced its third generation of STPOWER silicon-carbide (SiC) MOSFETs that leverage the new third-generation SiC platform and have a higher voltage rating in relation to their die size, making the technology an excellent choice for EV applications and fast-charging EV infrastructures. These MOSFETs set new industry-leading benchmarks for the accepted figures-of-merits (FoMs) [on-resistance (Ron) x die size, and Ron x gate charge (Qg)] that express transistor efficiency, power density, and switching performance.
These devices benefit from a very fast intrinsic diode that delivers the bi-directional properties needed for automotive onboard chargers (OBCs) used in Vehicle-to-X (V2X) power flow allowing the transmission of electricity from an OBC battery to the infrastructure. Moreover, their high-frequency capability allows smaller passive components within power systems, which permit more compact and lightweight electrical equipment in the vehicle.
Features
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AEC-Q101 qualified
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Very low RDS(on) over the entire temperature range
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High-speed switching performances
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Very fast and robust intrinsic body diode
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Source sensing pin for increased efficiency
Applications
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Electric Vehicles
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Industrial Applications
Availability and Pricing
The first products available are the 650V SCT040H65G3AG which is priced at $5.00.
