GaN Semiconductor Technology-based Low Noise Amplifiers for Robust Input Power Protection
Fairview Microwave has introduced the Gallium Nitride (GaN) semiconductor technology-based input protected Low Noise Amplifiers (LNAs) for providing robust input protection. The new covers desirable microwave and mm-wave frequency bands, hence they are suitable for use in electronic warfare, radar, space systems, R&D, prototype/proof of concept, ECM, microwave radio, VSAT, SATCOM, and test & measurement applications.
The high breakdown voltage of the LNAs provides higher toleration of RF input power signal level at the same time maintains excellent low noise figure performance. The LNAs feature high gain up to 46 dB typical, high RF input power handling up to 10 watts CW, broadband frequencies ranging from 1 to 23 GHz, and low noise figures as low as 1.5 dB typical. The GaN Technology used in the LNAs ensures state-of-the-art performance with an excellent power-to volume ratio ideal for broadband high power applications.
Features of Input Protected LNAs
- GaN Semiconductor Technology
- Broadband Frequencies ranging from 1 - 23 GHz
- High RF input power handling up to 10 watts CW
- High gain up to 44 dB typ
- Low Noise Figure as low as 1.5 dB typ
- Rugged Mil-Grade SMA Connectorized Packaging
Note: More technical information can be found in the FMAM1075 Datasheet linked at the bottom of this page and on the GaN Input Protected Low Noise Amplifiers product page.
