30 V N-Channel SiSS52DN MOSFET to Deliver High Power Density and Efficiency for Isolated and Non-Isolated Topologies

Vishay Intertechnology has released a new 30 V N-Channel MOSFET, SISS52DN that is capable of delivering high power density and efficiency for isolated and non-isolated topologies. Housed in 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212‑8S package, this latest device from the company delivers on-resistance of 1.5 mΩ at 4.5 V. Its 29.8 mΩnC on-resistance times gate charge at 4.5 V which is a critical figure of merit (FOM) for MOSFETs used in switching applications. 

The device is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. The high-performing MOSFET can help designers in simplifying the part selection in isolated and non-isolated topologies. 

The device is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free. Overall, the SISS52DN MOSFET leads to lower conduction and switching losses to save energy in power conversion applications. The samples and production quantities of the SiSS52DN are available with lead times of 12 weeks.

Features of SISS52DN 30 V N-Channel MOSFET

• TrenchFET Gen V power MOSFET 
• Very low RDS x Qg figure-of-merit (FOM) 
• Enables higher power density with very low RDS(on) and thermally enhanced compact package 
• 100% Rg and UIS tested
• 1.5 mΩ at 4.5 V On-Resistance
• 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212‑8S package

Note: More technical information can be found in the SISS52DN datasheet linked at the bottom of this page and in the SISS52DN 30 V N-Channel MOSFET product page.