AOM033V120X2Q: Automotive Grade 1200V/33mΩ αSiC MOSFETs for Superior Performance and Efficiency in Electric Vehicles

4 March 2021 - 0 Comments

Alpha and Omega Semiconductors Limited has collaboratively introduced AOM033V120X2Q, AEC-Q101 qualified 1200V/33mΩ silicon carbide (SiC) αSiC MOSFETs in an optimized TO-247-4L package. The new device has been specifically designed for demanding automotive application that has implemented an 800V electrical system for reducing the system’s size and weight while increasing range and enabling significantly faster charging.

The new automotive-grade αSiC MOSFETs offer superior switching performance, reliability, and efficiency in electric vehicle (EV) on-board chargers, motor drive inverters, and off-board charging stations, these 1200V SiC MOSFETs provide the industry-leading lowest on-resistance available for an automotive-qualified TO-247-4L with a standard gate drive of 15V.

The additional sense lead of the new αSiC MOSFETs reduced the inductance effects and enables the device to operate at a higher switching frequency with up to 75% reduction in switching losses compared to standard packaging. The 15V gate driver voltage allows the wildest compatibility of gate drivers for ease of adoption in a variety of system designs. The αSiC MOSFETs have a very low increase in on-resistance up to the rated 175°C to minimize power losses and further increase efficiency.

Features of AOM033V120X2Q

Proprietary αSiC MOSFET technology
Low loss, with low RDS, ON
Fast switching with low RG and low capacitance
Optimized gate drive voltage (VGS =15V)
Low reverse recovery diode (Qrr)
Maximum operating junction temperature to 175°C
AEC-Q101 Automotive Qualified

Note: More technical information can be found in the AOM033V120X2Q Datasheet linked at the bottom of this page and in the product page of AOM033V120X2Q αSiC MOSFETs.