New 1200 V Silicon Carbide Schottky Diodes Enhance Efficiency and Reliability

27 June 2024 - 0 Comments

Vishay Intertechnology has launched a new series of Gen 3 1200 V silicon carbide (SiC) Schottky diodes, designed to improve efficiency and reliability in switching power designs. These diodes feature a merged PIN Schottky (MPS) design, which enhances their surge current robustness and reduces forward voltage drop, capacitive charge, and reverse leakage current. The new SiC diodes range from 5 A to 40 A and come in various packages, including TO-220AC 2L, TO-247AD 2L, TO-247AD 3L through-hole, and D2PAK 2L (TO-263AB 2L) surface-mount packages. They offer a low capacitance charge of 28 nC and a forward voltage drop of 1.35 V. With a typical reverse leakage current as low as 2.5 µA at 25 °C, these diodes minimize conduction losses and ensure high system efficiency during light loads and idling.

Additionally, the Gen 3 diodes have minimal recovery tail, further boosting efficiency. These diodes are suitable for a range of applications, including AC/DC power factor correction (PFC), DC/DC ultra-high frequency output rectification in full-bridge power supplies (FBPS), and LLC converters for solar power inverters, energy storage systems, industrial drives and tools, and datacenters. They can operate at temperatures up to +175 °C and have forward surge ratings up to 260 A, ensuring high robustness.

The D2PAK 2L package also features a high comparative tracking index (CTI) of 600, providing excellent electrical insulation at elevated voltages. The new diodes are RoHS-compliant and halogen-free, having passed higher temperature reverse bias (HTRB) testing for 2000 hours and temperature cycling testing for 2000 thermal cycles, demonstrating their high reliability and suitability for demanding applications.