Infineon’s Radiation-Hardened Ferroelectric-RAM Devices for Space Applications

19 June 2024 - 0 Comments

Infineon Technologies AG has introduced new radiation-hardened (rad hard) 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices. These components are designed for use in space-based applications such as satellites, Mars rover instruments, and space telescopes. They offer data retention of up to 120 years at 85 degrees Celsius and support random access and full memory write at bus speeds. The F-RAM devices provide faster random access compared to traditional EEPROM nonvolatile storage and offer data security through instant non-volatile write technology. They also have low power requirements, with a programming voltage as low as 2 V and a maximum operating current of 20 mA.

These memory devices are suitable for applications where data is processed on the system rather than transmitted to the ground, including data storage for sensors and instruments, logging calibration data, securely storing encryption keys, and boot code storage. They are also appropriate for avionics and other environments requiring military standard temperature ranges from -55°C to 125°C. The chemical composition of the F-RAM devices allows for instantaneous atomic state switching, making them immune to soft errors, magnetic fields, and radiation effects. This results in endurance exceeding 10¹³ write cycles, eliminating the need for wear leveling.