GS-065-00-5-B-A: Compact Automotive Grade 650V GaN E-mode Transistor for Demanding High Power Applications
GaN System has expanded its family of automotive-grade 650V transistors with the introduction of GS-065-00-5-B-A, a 60A bottom side cooled transistor. This new transistor combines high-frequency properties of GaN with GaN Systems’ proprietary Island Technology layout and GaN PX packaging for providing high power, low loss performance in today’s power electronics.
GS-065-00-5-B-A has been developed especially for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The bottom-side cooled transistor can offer very low junction-to-case thermal resistance for demanding high-power applications. By leveraging the GaN power transistor, the power engineers can make their product 50% smaller and lighter, at a reduced system cost.
Features of GS-065-00-5-B-A Transistor
- 650 V enhancement mode power transistor
- Bottom-cooled, low inductance GaNPX package
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz) Small 11 x 9 mm2 PCB footprint
Note: More technical information can be found in the GS-065-00-5-B-A Datasheet linked at the bottom of this page and on the product page of GS-065-00-5-B-A E-Mode GaN Transistor.