GS-065-00-5-B-A: Compact Automotive Grade 650V GaN E-mode Transistor for Demanding High Power Applications

GS-065-00-5-B-A E-Mode GaN Transistor
GS-065-00-5-B-A E-Mode GaN Transistor
GS-065-00-5-B-A E-Mode GaN Transistor

GaN System has expanded its family of automotive-grade 650V transistors with the introduction of GS-065-00-5-B-A, a 60A bottom side cooled transistor. This new transistor combines high-frequency properties of GaN with GaN Systems’ proprietary Island Technology layout and GaN PX packaging for providing high power, low loss performance in today’s power electronics.

 

GS-065-00-5-B-A has been developed especially for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The bottom-side cooled transistor can offer very low junction-to-case thermal resistance for demanding high-power applications. By leveraging the GaN power transistor, the power engineers can make their product 50% smaller and lighter, at a reduced system cost.

 

Features of GS-065-00-5-B-A Transistor

  • 650 V enhancement mode power transistor
  • Bottom-cooled, low inductance GaNPX package
  • RDS(on) = 25 mΩ
  • IDS(max) = 60 A
  • Ultra-low FOM
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz) Small 11 x 9 mm2 PCB footprint

 

Note: More technical information can be found in the GS-065-00-5-B-A Datasheet linked at the bottom of this page and on the product page of GS-065-00-5-B-A E-Mode GaN Transistor.

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