EPC GaN FETs Enable 4 kW High-Efficiency Buck-Boost Converter Reference Design

Efficient Power Conversion (EPC) has announced the integration of its EPC2361 100 V eGaN FETs into a high-performance buck-boost converter reference design developed by Analog Devices, Inc. (ADI). This reference design platform, designated as EVAL-LT7930-AZ, combines the ADI LT7930 controller with EPC2361 GaN FETs to create a dual-phase, interleaved buck-boost converter.

The EVAL-LT7930-AZ was introduced to showcase how gallium nitride (GaN) technology can facilitate efficient, high-current power conversion, particularly for demanding high-power applications. It provides a compact, highly efficient multi-kilowatt platform that operates from an input voltage range of 36 V to 65 V, delivering a stable 48 V output. The platform is capable of supporting up to 4 kW of output power while achieving impressive typical efficiencies of 98.5% at 36 V and 48 V input, and 98.8% at 65 V input.

Central to this design is the EPC2361, a 100 V, 133 A enhancement-mode GaN transistor. This device features a typical on-resistance of 0.75 mΩ within a compact 3 mm × 5 mm package. Its characteristics, including ultra-low conduction losses, low gate charge, and zero reverse recovery, make it exceptionally well-suited for high-current, high-frequency power conversion systems.

According to Alex Lidow, CEO and co-founder of EPC, the EVAL-LT7930-AZ demonstrates the synergy between EPC's EPC2361 GaN technology and the ADI LT7930 controller. This combination enables power designers to transition GaN from individual discrete components into complete, high-performance power systems. The LT7930 power-stage controller further enhances this by featuring gate drivers specifically optimized for GaN FETs and programmable dead-time control, which is set to 10 ns on this platform to minimize reverse-conduction losses while ensuring safe switching operation.

Source Link: Press Release

Specifications

Key Features

• Utilizes EPC2361 100 V enhancement-mode GaN FETs paired with the Analog Devices LT7930 power-stage controller.
• Supports up to 4 kW of continuous output power in a dual-phase, interleaved buck-boost architecture.
• Delivers a typical efficiency of 98.5% at 36 V and 48 V input, and 98.8% efficiency at 65 V input.
• Incorporates a continuous voltage rating of 100 V and a current rating of 133 A per EPC2361 GaN FET.
• Provides ultra-low conduction losses via a typical on-resistance (RDS(on)) of 0.75 mΩ.
• Packaged in a compact 3 mm × 5 mm footprint for space-constrained power stage designs.
• Eliminates reverse recovery losses inherent in traditional silicon MOSFET switching.
• Implements programmable dead-time control set to 10 ns to optimize switching behavior and minimize reverse-conduction losses.
• Includes integrated gate drivers built into the LT7930 controller specifically optimized for driving GaN FETs.
• Features low gate charge characteristics to support high-frequency and high-efficiency power switching.

Applications

• High-power industrial systems
• Telecom power infrastructure
• Battery charging systems
• Data center power systems
• High-power AC-DC power supplies
• High-frequency DC-DC conversion
• Motor drives
• Robotics

Avaliablity

The EPC EVAL-LT7930-AZ 4 kW high-efficiency buck-boost converter reference design, featuring EPC’s EPC2361 100 V eGaN FETs and Analog Devices’ LT7930 controller, was announced on October 20, 2026. The EPC2361 GaN FETs are available through EPC’s global distribution network and authorized distributors, including DigiKey and Mouser. Engineers can access device documentation, simulation models, and evaluation hardware through EPC to support product evaluation and design integration.