650 V SiC Schottky Diodes with MPS Design to Reduce Switching Losses and Effects from Temperature Variances
Vishay Intertechnology has released 10 new 650 V silicon carbide (SiC) Schottky diodes to increase the efficiency of high-frequency applications by reducing switching losses. Regardless of the effects of temperature variances, these new devices can operate at higher temperatures. The merged PIN Schottky (MPS) design of the diodes shields the electric field from the Schottky barrier and reduces leakage currents while increasing surge current capability via hole injection.
These new diodes are available with current ratings from 4 A to 40 A in the 2L TO-220AC and TO-247AD 3L packages and offer high-temperature operation to +175 °C. They handle the same level of current as of the traditional pure silicon Schottky devices with the only difference that there is a slight increase in forward voltage drop while demonstrating a significantly higher degree of ruggedness.
The devices are used for PFC, high-frequency rectification in high voltage power supplies, and LLC converters for servers, telecom equipment, UPS, and solar inverters. These provide designers with increased flexibility in system optimization. Samples and production quantities of the new SiC diodes are available now, with lead times of 10 weeks.
Features of 650 V SiC Schottky Diodes
- Merged PIN Schottky (MPS) design
- Available with current ratings from 4 A to 40 A
- Majority carrier diode using Schottky technology on SiC wide bandgap material
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Offered in the 2L TO-220AC and TO-247AD 3L packages
- Provide high-temperature operation to +175 °C
- RoHS-compliant and halogen-free
Note: More technical information can be found in the 650 V SiC Schottky Diodes datasheet linked at the bottom of this page and on the 650 V SiC Schottky Diodes product page.