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650V

Renesas TP65H020G4PLSGBD 650V GaN Dual-Side Cooled Device
Renesas TP65H020G4PLSGBD 650V GaN Dual-Side Cooled Device

Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package

Renesas TP65H020G4PLSGBD is the industry's first 650V GaN device with dual-side cooling in an 8x8mm package, engineered for high-density power conversion in megawatt-scale AI data centers.
ROHM Introduces 650V IGBTs Achieving Industry-Leading
ROHM Introduces 650V IGBTs Achieving Industry-Leading

ROHM Introduces 650V IGBTs Achieving Industry-Leading* Low Loss Characteristics

ROHM's RGAY0TS65EHRC11 is a 650V, 88A Field Stop Trench IGBT with an integrated FRD, AEC-Q101 qualified for automotive and industrial power conversion, featuring a low 1.65V VCE(sat) and 7μs…