Alpha and Omega Semiconductor’s New αMOS E2™ 600V Super Junction MOSFETs
Alpha and Omega Semiconductor Limited (AOS) has released its αMOS E2™ 600V Super Junction MOSFETs, specifically the AOGT037V60DE2 and AOGT060V60DE2. These high-voltage MOSFETs are designed with top-side-cooled GTPAK™ packages to meet the demanding requirements of high-performance power systems and solar inverters, addressing the need for enhanced efficiency and increased power density management capabilities.
The αMOS E2 High-Voltage MOSFET platform is intended for higher-voltage applications such as servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems. These devices are engineered to satisfy the needs of high-performance SMPS and solar inverters, offering higher efficiency, greater power density, lower system cost, and enhanced robustness. The technology supports various topologies, including boost PFC, totem-pole PFC (slow leg), LLC resonant, PSFB, and cyclo-converters.
AOS differentiates these MOSFETs by combining the αMOS E2 silicon with its top-side-cooled GTPAK™ package. This integration optimizes both electrical and thermal paths, with the top-side cooling pad specifically designed to maximize thermal performance. This approach allows system designers to optimize thermal dissipation and reclaim PCB space, thereby maximizing overall power density. AOS asserts that this co-optimization of electrical and thermal paths significantly enhances system performance and long-term reliability.
Specifications
| Product | Voltage Rating | On-Resistance | Package | Availability | Lead Time | Unit Price at 1,000 Pieces |
|---|---|---|---|---|---|---|
| AOGT037V60DE2 / AOGT060V60DE2 | 600 V | 37 mΩ / 60 mΩ | Top-side-cooled GTPAK™ | Production quantities | 16 weeks | $6.00 / $3.00 |
Key Features
- The αMOS E2 High-Voltage MOSFET platform uses 600V Super Junction MOSFET technology.
- The AOGT037V60DE2 and AOGT060V60DE2 utilize top-side-cooled GTPAK™ packages.
- The top-side-cooled package maximizes power density by co-optimizing electrical and thermal paths.
- The platform features exceptional body-diode ruggedness with a stated di/dt of 1500 A/µs.
- The devices provide superior avalanche (UIS) capability.
- The devices provide short-circuit withstand time (SCWT).
- The built-in fast body diode reduces Qrr for high-stress applications.
- The devices provide enhanced robustness with strong UIS, inrush current handling, and wide SOA capabilities.
- The devices are designed to prevent self-turn-on for reliable operation under dynamic conditions.
- Gull-wing leads are specified to deliver board-level reliability in mission-critical environments.
- The top-side cooling pad is used to maximize thermal performance.
Applications
- Servers
- Workstations
- Telecom rectifiers
- Solar inverters
- Motor drives
- Industrial power systems
- Boost PFC, Totem-pole PFC, LLC, PSFB, and CrCM H-4/Cyclo inverter applications
Availability
The new AOS αMOS E2™ 600V Super Junction MOSFETs, including the AOGT037V60DE2 (600V, 37mΩ) and AOGT060V60DE2 (600V, 60mΩ), are now available in production quantities in AOS’ top-side-cooled GTPAK package, with a standard lead time of 16 weeks. For 1,000-piece quantities, the unit prices are $6.00 for the AOGT037V60DE2 and $3.00 for the AOGT060V60DE2.
