TPSMB Asymmetrical TVS Diode: Offering Optimized Overvoltage Protection for Automotive SiC MOSFET Applications

Littlefuse have released TPSMB Asymmetrical TVS Diode Series which are designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. They bring in the solution for overvoltage protection in electric vehicles (EV) systems, making it compact and reducing the number of components used for production. Replaces the Zener diodes or TVS components that are traditionally used for gate driver protection.

TPSMB Asymmetrical Series Surface-Mount TVS Diodes are AEC-Q101-qualified, ensuring the highest reliability for automotive applications. They handle different positive nad negative voltage levels thus protecting the SiC MOSFET gate drivers. With a compact DO-214AA package, they offer 600W peak pulse power protection against voltage spikes and maintain stable performance up to 2 MHz for SiC MOSFET applications ensuring durability and high reliability in automotive environments.

Features of TPSMB Asymmetrical Series Surface-Mount TVS Diode

• A Single-Component SiC MOSFET Gate Driver Protection

• Asymmetrical Gate Driver Voltage Protection

• Compact Design

• Automotive-Grade Quality

• High Power Dissipation

• Low Clamping Voltage

• Wide Frequency Stability

• Compatible with Leading SiC MOSFETs

Applications of TPSMB Asymmetrical Series Surface-Mount TVS Diode

• Gate driver protection of SiC MOSFET

• On-board charger (OBC)

• Traction inverters

• Automotive Applications