Diodes Incorporated Launches Innovative Silicon Carbide Schottky Barrier Diodes

Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products, has announced the launch of its first Silicon Carbide (SiC) Schottky Barrier Diodes (SBD). The company's portfolio includes two series, the DIODES™ DSCxxA065 and DIODES™ DSCxx120, with a total of 19 products rated at 650V and 1200V.

These wide-bandgap SBDs offer improved efficiency and high-temperature reliability, responding to the market's need for reduced system running costs and low maintenance. The devices are suitable for a variety of applications, including AC-DC, DC-DC, and DC-AC switching converters, photovoltaic inverters, uninterruptable power supplies, and industrial motor drives.

The efficient performance of these SiC devices surpasses that of conventional silicon-based products, providing power supply designers with several benefits, including:

• Negligible switching losses due to low capacitive charge (QC), suitable for circuit designs with higher power density and smaller overall solution size.
• Low forward voltage (VF) that further improves efficiency, reducing power losses and operational costs.
• Reduced heat dissipation that helps lower overall system cooling budgets.
• High surge current capability that increases robustness for better system reliability, while excellent thermal performance reduces build costs.

The DSCxxA065 and DSCxx120 series are available in three package options, including surface mount TO252-2 (Type WX), through-hole TO220AC (Type WX), and ITO220AC (Type WX-NC). The products are priced between $1.24 and $6.68 in 1,000 piece quantities