150V GaN HEMT Devices with 8V Gate Breakdown Voltage for Power Supply Circuits in Industrial and Communication Equipment

ROHM has introduced the highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment. These new GaN devices offer superior high-frequency operation in a medium voltage range and offer improved switching characteristics and low on-resistance than silicon devices.

ROHM has raised the rated gate-source voltage from the typical 6V to 8V using an original structure. This helps in improving the design margin and increases the reliability of power supply circuits. Along with low power consumption and contribution to miniaturization, these new devices maximize device performance with low parasitic inductance.

Device performance is maximized by increasing the rated gate-source voltage and adopting a low-inductance package, resulting in 65% lower switching loss compared to the conventional silicon solution. These new GaN HEMT devices are suitable for use in 48V input buck converter circuits for data centers and base stations, boost converter circuits for the power amplifier block of base stations, Class D audio amplifiers, LiDAR drive circuits, and wireless charging circuits for portable devices.

Features of 150V GaN HEMT

• Gate-source voltage: 8V
• Wide bandgap
• High electron saturation velocity
• Large breakdown electric field
• High-frequency operation at a low medium voltage range
• High-speed switching (>1MHz)
• Reduce switching losses

Note: More technical information can be found in the 150V GaN HEMT Datasheet and product presentation of the 150V GaN HEMT Devices.