High Power PhotoMOS Photovoltaic MOSFET Drivers for High-Speed Operation and Low On-Resistance in Industrial Equipment

11 May 2021 - 0 Comments

Panasonic has introduced the new Photovoltaic MOSFET High Power Type PhotoMOS Relays product line in a small package size (SSOP) with higher short circuit current and drop-out voltage to MOSFET’s gate. Capable of driving high Vgs MOSFET such as SiC MOSFETs this Driver is capable of high switching capacities at high switching speeds.

The new PhotoMOS Relay can be used in applications where traditional Electromechanical Relays are already being used. This replacement can provide additional benefits such as long life cycle, better resistance to shock and vibration, low On-resistance and a theoretically infinite life cycle. The PhotoMOS relays can be used in measurement market, security equipment, fire prevention systems, and industrial machines; they are also suitable for Battery Monitoring Systems, Test and Measurement and Electrical Power.

Feature of PhotoMOS Relay

Miniature SSOP package
High-speed MOSFET operation (high output current: APV1111GVY)
Low on-resistance of MOSFET (high output voltage: APV3111GVY)
Typical dropout voltage : 8.5V(APV1111GVY) ; 18V (APV3111GVY)
Typical short circuit current: 45µA (APV1111GVY) ; 12µA (APV3111GVY)

Note: More technical information can be found in the PhotoMOS Relay Datasheet linked at the bottom of this page and in the product page of Photovoltaic MOSFET Driver High Power Type.