MasterGaN4 Power Packages with Two Symmetrical 650V GaN Power Transistors for High-Efficiency Power Conversion Applications up to 200W

MasterGaN4 Power Device from STMicroelectronics
MasterGaN4 Power Device from STMicroelectronics
MasterGaN4 Power Device from STMicroelectronics

STMicroelectronics has introduced the MasterGaN4 power packages with two symmetrical 650V gallium nitride (GaN) power transistors with 225mΩ RDS(on). By using the wide-bandgap GaN power semiconductor along with optimized gate drivers and circuit protection, the new device simplifies the design of high-efficiency power conversion applications up to 200W.

 

With inputs tolerant of voltages from 3.3V to 15V, the MasterGaN4 can be controlled by connecting the packages directly to Hall-effect sensors or a CMOS device such as a microcontroller, DSP, or FPGA. Features such as higher operating frequencies, increased efficiency that reduces thermal dissipation allows the designers to choose small magnetic components and heatsinks to build more compact and lightweight power supplies, chargers, and adapters.

 

With a wide supply voltage range from 4.75V to 9.5V, the MasterGaN is ideally suited for use in symmetrical half-bridge topologies as well as soft-switching topologies such as active clamp flyback and active clamp forward. The new device includes various protection features such as gate-driver interlocks, low-side and high-side under-voltage lockout (UVLO), over-temperature protection, and a dedicated shutdown pin.

 

Along with the MasterGaN4 power packages, ST is also introducing a dedicated prototype board (EVALMASTERGAN4) that provides a complete set of features to drive the MasterGaN4 with a single or complementary driving signal. Packed in a 9mm x 9mm x 1mm GQFN package, the MasteGaN4 is available at $5.99 for orders of 1000 pieces.

 

Features of MasterGaN4 Power Packages

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shut down functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Over-temperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy, and fast design

 

Note: More technical information can be found in the MasterGaN4 Datasheet linked at the bottom of this page and on the product page of MasterGaN4 power packages.

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