MasterGaN2- Optimized Asymmetric GaN Transistors for Soft-Switching and Active-Rectification Converter Topologies

MasterGaN2- Optimized Asymmetric GaN Transistors
MasterGaN2- Optimized Asymmetric GaN Transistors
MasterGaN2- Optimized Asymmetric GaN Transistors

The MasterGaN2 from STMicroelectronics has been designed with two asymmetric gallium-nitride(GaN) transistors for delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies. The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. The device combines advanced integration with GaN’s inherent performance advantages to extend the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback.

 

The MasterGaN family combines the two GaN High-Electron-Mobility Transistors (HEMTs) and associated high-voltage gate drivers in the same package. MasterGaN device allows the users to connect external devices such as Hall sensors and controllers such as DSP, FPGA, or microcontroller directly to it. The inputs are compatible with logic signals from 3.3V to 15V, which helps simplify the circuit design and bill of materials, permits a smaller footprint, and streamlines assembly. GaN technology has been designed to develop 80% smaller and 70% lighter and three times faster USB-PD adapters and smartphone chargers.

 

The MasterGaN2 is protected by low-side and high-side under-voltage lockout (UVLO), gate-driver interlocks, a dedicated shutdown pin, and over-temperature protection. The 9mm x 9mm x 1mm GQFN package is optimized for high-voltage applications, having over 2mm creepage distance between high-voltage and low-voltage pads.

The MasterGaN2 is in production now, priced from $6.50 for orders of 1000 pieces.

 

Features of MasterGaN2

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors
  • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
  • IDS(MAX) = 10 A (LS) + 6.5 A (HS)
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Dedicated pin for shutdown functionality

 

Note: More technical information can be found in the MasterGaN2 datasheet linked at the bottom of this page and on the MAsterGaN2 product page.

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