Integrated Gallium Nitride Solutions for Delivering High-Frequency Operation and Increased Efficiency in Next-Generation Automotive Applications
STMicroelectronics has introduced the STi2GaN, a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions. The new device combines power and intelligence for providing a compact and high-performance solution for the electrified automotive platforms. The GaN Technology can provide high-frequency operation with increased efficiency and high power density compared to silicon-based transistors.
The STi2 GaN family combines a monolithic power stage along with drivers and protection in GaN technology as well as System-in-Package (SiP) solutions for application-specific ICs with additional processing and control circuitry. With the help of the ST’s novel bond-wire-free packaging technology, the new device offers high robustness, reliability, and performance.
With low cooling requirements and smaller heat sinks, the STi2 GaN family can be used in applications such as wireless chargers, 48/12V bidirectional DC-DC converters, LiDAR, On-Board Chargers, Class-D amplifiers, and power supplies.
Features of STi2GaN Solution
- High-frequency operation
- Increased efficiency
- Higher power density
- Low need for cooling equipment
- Provide two different levels of integration
- Bond-wire-free package
Note: More technical information can be found on the product page of STi2GaN Gallium Nitride Solution.
