Integrated Gallium Nitride Solutions for Delivering High-Frequency Operation and Increased Efficiency in Next-Generation Automotive Applications

STMicroelectronics has introduced the STi²GaN, a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions. The new device combines power and intelligence for providing a compact and high-performance solution for the electrified automotive platforms. The GaN Technology can provide high-frequency operation with increased efficiency and high power density compared to silicon-based transistors.

The STi² GaN family combines a monolithic power stage along with drivers and protection in GaN technology as well as System-in-Package (SiP) solutions for application-specific ICs with additional processing and control circuitry. With the help of the ST’s novel bond-wire-free packaging technology, the new device offers high robustness, reliability, and performance.

With low cooling requirements and smaller heat sinks, the STi² GaN family can be used in applications such as wireless chargers, 48/12V bidirectional DC-DC converters, LiDAR, On-Board Chargers, Class-D amplifiers, and power supplies.

Features of STi²GaN Solution

• High-frequency operation
• Increased efficiency
• Higher power density
• Low need for cooling equipment
• Provide two different levels of integration
• Bond-wire-free package

Note: More technical information can be found on the product page of STi²GaN Gallium Nitride Solution.