Infineon Launches 650 V CoolGaN Switch for Single-Stage Power Conversion

Infineon Technologies has announced its new CoolGaN bidirectional switch 650 V G5, a next-level gallium nitride switch designed to make modern power systems simpler, compact, and more efficient. Built with Infineon’s proven CoolGaN GIT technology, the new BDS device offers bidirectional voltage and current control, by which it can actively block power flow in both directions.

It has a common-drain design and double-gate structure, combining two switches into one monolithic device. This is a major step forward from traditional back-to-back transistor configurations, which are typically used in power converters. It gives more simplified designs, fewer components, and increased system efficiency, especially for designs like cycloconverters, which now can work as a single-stage converter without additional complexity.

Due to its compact form and flexible performance, the CoolGaN BDS 650 V is a strong fit across a range of power conversion needs.

Features of CoolGaN bidirectional switch 650 V G5

• Gate Injection Transistor (GIT) structure

• Reliable Thermal Cycling on‑Board (TCoB) performance

• Dual‑gate for independent bi‑directional functionality

• Optimized for soft switching operation

• 2 kV HBM ESD standard

Applications of CoolGaN bidirectional switch 650 V G5

• Microinverters

• Energy Storage Systems 

• EV Charging

• Motor Control 

• AI Data Centers

Availability of CoolGaN bidirectional switch 650 V G5

The CoolGaN BDS 650 V G5 is available for order now, with samples of the 110 mΩ version also ready for testing and development.