Infineon EiceDRIVER™ 2EDL6014AC-G2D Dual Channel Gate Driver for AI Datacenter Power Designs
Infineon Technologies AG introduces the EiceDRIVER™ 2EDL6014AC-G2D, a 120 V junction-isolated dual channel floating output gate driver. This device is engineered for high-density silicon power designs specifically for AI datacenter applications and is housed in a compact WQFN-12 package measuring 2.2 mm x 2.2 mm. It addresses the critical demand for power conversion solutions that can deliver higher server rack density without compromising reliability or thermal performance.
The 2EDL6014AC-G2D is a versatile platform driver, supporting dual high-side, dual low-side, and half-bridge configurations. It is designed to be utilized across switched-capacitor and multilevel topologies, which are increasingly adopted in next-generation AI server power architectures.
The device features two completely independent floating output gate drivers, each capable of driving a high-side MOSFET operating at up to 120 V. It provides a robust 4 A source and 6 A sink current driving capability, with separate INA and INB input pins allowing for independent control of both channels. Integrated deglitch filtering enhances noise immunity, which is crucial in high-density PCB environments.
Its input stage is compatible with both 3.3 V and 5 V logic, enabling direct connection to a microcontroller ground to maximize signal integrity. For safe system startup, undervoltage lockout on both floating output supplies forces the corresponding outputs low if the supply voltage is insufficient. An exposed pad is incorporated to provide low thermal impedance, improving heat dissipation under sustained heavy loads, a vital characteristic for the continuous high-utilization operating profiles of AI inference and training infrastructure.
Specifications
| Product | Voltage | Package | Package Size | Source Current | Sink Current | Logic Compatibility |
|---|---|---|---|---|---|---|
| EiceDRIVER™ 2EDL6014AC-G2D | 120 V | WQFN-12 | 2.2 mm x 2.2 mm | 4 A | 6 A | 3.3 V and 5 V |
Key Features
- 120 V junction-isolated dual-channel floating output gate driver.
- Two completely independent floating output gate drivers.
- Each output gate driver is capable of driving a high-side MOSFET operating at up to 120 V.
- Supports dual high-side configurations.
- Supports dual low-side configurations.
- Supports half-bridge configurations.
- Provides 4 A source and 6 A sink current driving capability.
- Separate INA and INB input pins enable independent control of both channels.
- Integrated deglitch filtering provides improved noise immunity in high-density PCB environments.
- The input stage is compatible with 3.3 V and 5 V logic and can be directly connected to microcontroller ground to maximize signal integrity.
- Undervoltage lockout on both floating output supplies forces the corresponding outputs low when supply voltage is insufficient.
- An exposed pad provides low thermal impedance for improved heat dissipation under sustained heavy loads.
Applications
- AI datacenter applications.
- High-density silicon power designs in AI datacenters.
- Next-generation AI server power architectures.
- Switched-capacitor topologies used in next-generation AI server power architectures.
- Multilevel topologies used in next-generation AI server power architectures.
- AI inference infrastructure with continuous high-utilization operating profiles.
- AI training infrastructure with continuous high-utilization operating profiles.
- AI server power delivery covering the power chain from grid to core, including solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules.
Availability
Samples of the new Infineon EiceDRIVER™ 2EDL6014AC-G2D dual-channel gate driver are available now. Designed for high-density silicon power designs in AI datacenter applications, the 120 V junction-isolated gate driver is offered in a compact WQFN-12 package.
