IRF640N N-Channel Power MOSFET Pinout, Equivalents & Datasheet Guide

IRF640N Pinout Configuration

When holding the IRF640N in its through-hole `TO-220AB` package with the front markings facing you and the leads pointing downward, the terminals follow the standard GDS MOSFET pin assignment from left to right.

This page covers the IRF640N pinout, key datasheet values, IRF640N equivalents, the IRF640 vs IRF640N difference and package dimensions.

IRF640N Package Variants & Ordering Information

Infineon (formerly International Rectifier) manufactures the IRF640N silicon die across three RoHS-compliant lead-free (`PbF`) packages to support through-hole heatsink mounting and high-density SMD PCB assembly.

IRF640N MOSFET Features and Specifications

• Polarity & Technology: N-Channel Enhancement-Mode HEXFET Power MOSFET
• Drain-to-Source Breakdown Voltage (V(BR)DSS): 200V (`VGS = 0V`, `ID = 250 µA`)
• Static On-Resistance (RDS(on)): 0.15 Ω (150 mΩ) max at `VGS = 10V`, `ID = 11A`
• Continuous Drain Current (ID): 18A at `TC = 25°C`; 13A at `TC = 100°C` (`VGS = 10V`)
• Pulsed Drain Current (IDM): 72A (pulse width limited by maximum junction temperature)
• Gate Threshold Voltage (VGS(th)): 2.0V min to 4.0V max (`VDS = VGS`, `ID = 250 µA`) - Standard gate drive
• Maximum Gate-to-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 67 nC max (`Qgs = 11 nC` max, `Qgd = 33 nC` max at `VDS = 160V`, `ID = 11A`)
• Switching Speed (`VDD = 100V`, `ID = 11A`, `RG = 2.5 Ω`): `td(on) = 10 ns`, `tr = 19 ns`, `td(off) = 23 ns`, `tf = 5.5 ns`

*Note: Complete Technical Details can be found in the IRF640N datasheet given at the end of this page.

IRF640N Equivalent and Alternative MOSFETs

If you need a complementary P-channel device for push-pull output stages, a lower-resistance upgrade, or a drop-in second-source replacement for the IRF640N, consider these parts. Use the table below to find an IRF640N equivalent for repair, a second source for production, a P-channel complement for push-pull stages, or an upgrade with lower conduction loss. The most common IRF640N circuit is a low-side switch: the load sits between the positive supply and the Drain, the Source goes to ground, and a 10V–12V signal on the Gate turns the load on.

Brief Description of IRF640N

Standard 10V Gate Drive Requirement (Not 3.3V Logic-Level): Although conduction starts between 2.0V and 4.0V, the IRF640N requires `VGS = 10V` to reach its full 0.15 Ω saturation channel. Driving the gate directly from a 3.3V or 5V microcontroller GPIO restricts drain current and triggers severe resistive heating; always insert a 10V–12V gate driver IC or optocoupler/transistor level-shifter.
200V Margin for 48V–120V Bus Rails: Switching inductive coils, transformers, or DC motors creates voltage flyback spikes during turn-off. The `200V` breakdown rating gives a wide safety margin over nominal 48V, 72V, 96V, and 110V DC rails without forcing designs into high-RDS(on) 400V–600V MOSFETs. Many searches for the IRF640 datasheet and IRF640 MOSFET are actually looking for the IRF640N, or wondering whether the two are interchangeable.

IRF640N Datasheet

Download the full IRF640N datasheet below for characteristic curves, safe operating area (SOA), avalanche ratings and test circuits.

Applications

• High-voltage DC-DC boost, flyback, and forward converters (48V–150V rails)
• Uninterruptible Power Supplies (UPS) and DC-AC off-grid power inverters
• High-power Class-AB and Class-D audio amplifier output stages (paired with IRF9640)
• Brushed DC motor controllers, e-bike drives, and industrial solenoid actuators
• Solar MPPT charge controllers and battery disconnect / solid-state relay switches

IRF640N TO-220AB Package Dimensions

All physical dimensions below correspond to the Infineon PG-TO220-3-U05 (TO-220AB) package outline shown in the drawing and are specified in millimetres (`mm`) unless noted otherwise.