New-Gen CoolSiC Schottky Diode 2000 V with .XT Technology for Industrial Applications Requiring Higher DC Link Voltages.

Infineon Technologies AG revealed CoolSiC  Schottky diode 2000 V G5 which, comes with a discrete silicon carbide diode with a breakdown voltage of 2000 V. These are most suitable for applications with DC link voltages up to 1500 VDC and offer current ratings from 10 to 80 A. Thus, it is the best option for applications requiring a higher DC link voltage, like solar and EV charging.

The overall design enables a smooth transition from multi-level topologies to 2-level topologies. It allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. The product family comes in a TO-247PLUS-4-HCC package with 14 mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80 A, enables a significantly higher power density.

Furthermore, by utilizing the .XT interconnection technology, the CoolSiC Schottky diode 2000V G5 achieves significantly lower impedance and thermal resistance, allowing for improved heat management. Additionally, HV-H3TRB reliability tests have shown that it is robust against humidity. The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, guaranteeing enhanced system performance.

Features of Schottky Diode 2000 V

• VRRM = 2000 V

• IF = 80 A

• VF = 1.5 V

• No reverse recovery current

• No forward recovery

• High surge current capability

• Temperature independent switch behavior

• Low forward voltage

• Tight forward voltage distribution

• Specified dv/dt ruggedness

• .XT interconnection technology

Applications of Schottky Diode 2000 V

• 3-phase string inverter solutions

• EV charging

• Solar charging