New Low Capacitance ESD Protection Devices with very Low Trigger and Clamping Voltage for High-Speed Data Lines

15 December 2022 - 0 Comments

PESD4V0Y1BBSF and PESD4V0X2UM ESD Diodes

Nexperia, has announced the latest additions to the Nexperia TrEOS portfolio, the PESD4V0Y1BBSF and PESD4V0X2UM extremely low clamping ESD protection diodes. These devices combine high surge robustness with very low trigger and clamping voltages and wide pass-bands, providing exceptional levels of immunity to surges, as demonstrated by their excellent IEC61000-4-5 ratings.

PESD4V0Y1BBSF ESD Diode Features

Bidirectional ESD protection of one line
VRWM = 4 V device
Very low diode capacitance Cd = 0.7 pF typical
Extremely low clamping and trigger voltage (6.7 V TLP) to protect sensitive I/Os
Extremely low inductance protection path to ground
ESD protection up to ±30 kV according to IEC 61000-4-2
IEC 61000-4-5 (surge): IPP = 25 A peak pulse (average measured)
Ultra small, very low inductance SMD package
Exceeds IEC 61000-4-4 level 4 for I/O data lines, meets IEC 61000-4-4 level 4 for power supply ports (corresponds to 80 A into a 50 Ohm termination)

PESD4V0X2UM ESD Diode Array Features

Unidirectional ESD protection of one line pair
VRWM = 4 V device
Extremely high surge robustness of 11.5 A for a 8/20 µs pulse
Extremely low diode capacitance, Cd = 0.82 pF typical
Extremely low clamping voltage to protect sensitive I/Os
ESD protection up to ±20 kV according to IEC 61000-4-2
Leadless ultra small SOT883-3 surface mount package
IEC 61000-4-4 robust up to level 4 for I/O data lines (corresponds to 40 A into a 50 Ohm termination)

Available in the low-inductance DSN0603-2 package, the one-line PESD4V0Y1BBSF offers a trigger voltage of 6.3 V TLP combined with a typical device robustness and capacitance of 25 A 8/20 µs and 0.7 pF, respectively. The PESD4V0Y1BBSF offers a clamping voltage at 16 A 100 ns TLP of only 2.4 V, at 20 A 8/20 µs surge only 3.4 V. The two-line PESD4V0X2UM comes in the compact DFN1006-3 package and offers a trigger voltage of 8 V, combined with a typical device robustness exceeding 14 A 8/20 µs with a typical device capacitance of 0.82 pF.

While both devices offer excellent protection for USB2.0 D+/D- lines, the PESD4V0Y1BBSF has a S21 pass-band exceeding 7.5 GHz, making it suitable for USB3.x @ 5 Gbps. Both devices provide high levels of immunity to surges, as demonstrated by their excellent IEC61000-4-5 ratings.