Radiation-Tolerant and QML-V Qualified NOR Flash Memory for FGPA Configuration and Boot Code Storage

Infineon Technologies AG has announced the high-density, radiation-tolerant (RadTol) NOR Flash memory products which are qualified to MIL-PRF-38535’s QML-V flow and deliver superior, low-pin count, single-chip solution for applications such as FPGA configuration, image storage, microcontroller data, and boot code storage. The devices are radiation-tolerant up to 30krad (Si) biased and 125krad (Si) unbiased. At 125°C, the devices support 1,000 Program/Erase cycles and 30 years of data retention, and at 85°C 10k Program/Erase cycles with 250 years of data retention.

Both 256Mb and 512Mb RadTol NOR Flash non-volatile memories are fully supported by the latest space-grade FPGAs and features 133 MHz SDR interface speed. Infineon leveraged the 65 nm floating gate Flash process technology to develop the RadTol dual QSPI non-volatile memories. The 512Mb device comprises two independent 256Mb die that fit side by side in a single package solution which provides flexibility for designers to operate the device in dual QSPI or single QSPI mode on either die independently, offering an option to use the second die as a backup solution.

Features                                              

• Temperature Range:  -55°C to 125°C

• Radiation-tolerant up to 30krad (Si) biased and 125krad (Si) unbiased

• 133 MHz SDR interface speed

• 65 nm floating gate Flash process technology

• Available in a 24x12 mm 2 36-lead ceramic flatpack package

• QML-V qualified

Applications

• FPGA configuration

• Image storage

• Microcontroller data

• Boot code storage

Availability

The RadTol NOR Flash devices are now available in a 24x12 mm 2 36-lead ceramic flatpack package.