Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module
Navitas Semiconductor has introduced a new family of ultra-high-voltage SiC power modules, designed to significantly enhance efficiency in energy and grid infrastructure. The flagship G4H08MT23GB4 2300 V full-bridge module leverages the industry-standard SiCPAK form factor and incorporates Navitas' advanced fourth-generation GeneSiC Trench-Assisted Planar architecture. This launch expands Navitas' existing 2300 V and 3300 V ultra-high voltage SiC portfolio, distinguished by a class-leading RDSON of 8 mΩ.
These modules are engineered to deliver superior efficiency and power density across a range of demanding applications, including solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure. Crucially, as grid-tied power architectures evolve to support next-generation AI data centers, these ultra-high-voltage SiC modules serve as a vital medium-voltage building block for solid-state transformers, enabling direct conversion of grid power into the high-voltage DC rails required within AI data center racks.
To ensure robust performance in high-power environments, the modules feature an aluminum nitride active-metal-braze substrate, which provides superior heat spreading and an isolation capability exceeding 5 kV. Furthermore, epoxy-resin potting technology is employed to minimize internal stress distribution, prevent moisture and contaminant ingress, and achieve a 10x improvement in thermal conductivity compared to traditional silicone gel. The design also includes high-current, press-fit pins that offer twice the current-carrying capability of standard press-fit connections, alongside an optional pre-applied thermal interface material to streamline heatsink assembly.
Source Link: Press Release
Specifications
| Product Series | Voltage Rating | RDSON | Form Factor | Technology |
|---|---|---|---|---|
| G4H08MT23GB4 | 2300 V | 8 mΩ | SiCPAK | GeneSiC Trench-Assisted Planar |
Key Features
- Utilizes fourth-generation GeneSiC Trench-Assisted Planar architecture.
- Features a 2300 V full-bridge configuration.
- Delivers a class-leading RDSON of 8 mΩ.
- Built using the industry-standard SiCPAK form factor.
- Integrates an aluminum nitride active-metal-braze substrate for superior heat spreading.
- Provides an isolation capability of over 5 kV.
- Employs epoxy-resin potting technology to reduce internal stress distribution and limit moisture and contaminant ingress.
- Delivers 10x improvements in thermal conductivity versus silicone gel.
- Equipped with high-current, press-fit pins offering twice the current-carrying capability per pin versus standard press-fit connections.
- Offers an optional pre-applied thermal interface material to simplify and standardize heatsink assembly.
- Qualified to Navitas' AEC-Plus reliability benchmark extending beyond standard AEC-Q101 and JEDEC test requirements.
- Includes availability of a double-pulse test system (EVB-UHVSIC-GB-E-DPT-1) for evaluating switching performance.
Applications
- Solid-state transformers
- Grid-scale battery energy storage systems
- Solar inverters
- Electric vehicle megawatt charging infrastructure
- AI data center power infrastructure
- Hydrogen fuel cell electrolysis and DC-DC conversion
- Industrial motor-drive and high-voltage power supply applications.
Availability
Navitas Semiconductor’s next-generation ultra-high-voltage silicon carbide (SiC) power module portfolio is available for customer sampling, including the G4H08MT23GB4 full-bridge power module. The 2300 V module features an on-resistance of 8 mΩ per switch and is part of Navitas’ high-voltage SiC portfolio developed to support energy and grid infrastructure applications. The product family includes standard and high-current variants, with optional pre-applied thermal interface material (TIM).
