Fourth-Generation 750V SiC FETs for Delivering High Efficiency and Low Conduction Loss in Automotive and Industrial Applications
UnitedSiC has introduced the Gen 4 UJ4C series of 750V SiC FETs for delivering breakthrough performance levels in automotive and industrial charging, telecom rectifiers, datacenter PFC DC-DC conversion, and renewable energy and energy storage applications. These new FETs offer best-in-class performance figures of merit (FoM) for lower conduction losses and increase efficiency at higher speed besides maintaining high levels of cost-effectiveness. The device is safety-driven with standard 0V to 12V or 15V gate drive voltage and delivers an excellent threshold noise margin maintained with true 5V threshold voltage.
With a built-in ESD protection clamp, the new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET, and SiC MOSFET drive voltages. The UJ4C series is AEC-Q101 qualified, and they are packed in industry-standard TO247-3L and TO247-4L packages.
Features of UJ4C SiC FET Series
- 750V VDS rating
- Low RDS(on) from 18mohm to 60mohm
- Excellent reverse recovery
- Low body diode
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Industry-standard through-hole and surface-mount packaging
Note: More technical information can be found in the UJ4C075018K3S Datasheet linked at the bottom of this page and on the UJ4C SiC FET Series product page.
