EiceDRIVER 2EDL8 Gate Driver IC to Speed up DC-DC Telecom Bricks Development for Mobile Network Infrastructure
The new EiceDRIVER 2EDL8 gate driver IC from Infineon Technologies encourages the development of DC-DC telecom bricks for mobile network infrastructure. The dual-channel junction isolated gate driver ICs allow for high power density, high efficiency, and robustness in isolated DC-DC step-down converters/telecom bricks enabling macro base stations for 5G and LTE telecom infrastructures.
The family comprises four variants that offer two different pull-up currents and two different input configurations. The 3A version has been designed for retrofit designs whereas the industry-leading 4A version has been designed to reduce MOSFET switching losses. The 2EDL8 features an integrated 120 V bootstrap diode and precise channel-to-channel propagation delay matching of ± 2 ns typically.
With the help of 2EDL802x, both channels can operate independently and it is also suitable for diagonally driven full-bridges on the primary side, as well as for the synchronous rectification stage on the secondary side to reduce the losses during the freewheeling phase. The differential input structure of the 2EDL812x and the built-in shoot-through protection makes it the perfect choice for non-diagonally driven primary side half-bridge stages in DC-DC brick converters.
Features of EiceDRIVER 2EDL8 Gate Driver IC
- 120 V boot-strap diode integrated
- Low resistance rail-to-rail outputs:
- Low-side: 4 A pull-up, 6 A pull-down
- High-side: 4 A pull-up, 5 A pull-down
- 4 ns delay matching
- Differential inputs, optional
Note: More technical information can be found in the EiceDRIVER 2EDL8 datasheet linked at the bottom of this page and on the EiceDRIVER 2EDL8 gate driver IC product page.
