EiceDRIVER 1EDB Single-Channel Gate-Driver IC Family with Integrated Galvanic Isolation for Fast Switching in High/Low Side Applications
Infineon Technologies has introduced the new EiceDRIVER 1EDB family of single-channel gate-driver ICs that offer galvanic input-to-output isolation of 3kVrms. The 1EDB family includes four parts namely 1EDB6275F, 1EDB7275F, 1EDB8275F and 1EDB9275F. All these devices offer common-mode transient immunity (CMIT) exceeding to 300V/ns. These new devices were optimized for both high/low side hard switching applications.
The 1EDB devices can reduce the PCB-layout problems in high-power applications such as servers, telecom, switched-mode power supplies (SMPS), and Uninterruptable power supply (UPS) systems. The new family of devices offers high system efficiency and provides robust and safe system operation in applications such as EV-charging systems and Photovoltaic inverters that require fast switching power MOSFETs.
Available in separate and very low ohmic (0.95 Ω) source and (0.48 Ω) sink outputs, these new devices offer typical drive strengths of 5.4 A peak source and 9.8 A peak sink. The devices offer low switching losses with +/-4ns input-to-output propagation delay accuracy in fast-switching applications. The typical output stage clamping speed of the device is as short as 20 ns and supports functionally safe system operation, especially during start-up.
Features of EiceDRIVER 1EDB Gate Driver ICs
- 3kVrms galvanic isolation
- Low impedance and separated source/sink outputs
- +4/-6ns propagation delay accuracy
- 300V/ns common-mode transient immunity
- 4V, 8V, 12V and 15V UVLO options
- 20ns output clamping speed
Note: More technical information can be found in the EiceDRIVER 1EDBx275F Datasheet linked at the bottom of this page and in the product page of the EiceDRIVER 1EDB family.
