600V QH12TZ600Q Silicon Diode with Low Reverse Recovery Charge for Improved Efficiency in Automotive Applications
Power Integrated’s newly released 600V 12A Qspeed diode has been designed to offer the low reverse recovery charge (Qrr) of just 14 nC at 25 °C for a silicon diode. Anticipated as the replacement for the SiC components in automotive applications, the QH12TZ600Q diode delivers improved efficiency for the PFC stage of on-board chargers and significantly reduces the thermals of the PFC MOSFETs.
The AEC-Q101 Qualified device uses merged PiN and Schottky diode technology to achieve high performance. In addition to increased efficiency, the smooth reverse recovery current transition characteristics of the device also offer reduced EMI and peak reverse voltage stress. This eliminates the need for snubbers when used as output rectifiers in onboard chargers.
Packed in 2.5 kV isolated TO-220 packages, the QH12TZ600Q can be directly mounted to metal heat sinking for delivering high thermal performance. The new 600 V 12 A Qspeed diodes are priced at $1.17 in 10,000-piece quantities.
Features of QH12TZ600Q Diode
- Low Qrr, low IRRM, low tRR
- High dIF/dt capable (1000 A / µs)
- Soft recovery
- AEC-Q101 qualified
- Fab, assembly and test certified to IATF 16949
Note: More technical information can be found in the QH12TZ600Q Datasheet linked at the bottom of this page and on the Qspeed Automotive Qualified Diodes product page.