24V Dual-Channel Low Side Gate Driver with Integrated Thermal Pad for Applications with Higher Switching Frequencies
Infineon Technologies has added 2ED24427N01F, a 24V dual-channel low side gate driver with an integrated thermal pad to its EiceDRIVER portfolio. The new gate driver IC is suitable for applications with higher switching frequencies such as power factor correction and synchronous rectification. It can also be used in transformer driver or a buffer driver for parallel MOSFET applications or high-current IGBT modules such as EasyPACK and EconoPACK.
The driver has 10A source and sink drive capability and is designed with an integrated thermal pad for delivering very low thermal resistance to enable reliable operation at lower temperatures under high current conditions. Packed in a DSO-8 package, the 2ED24427N01F provides a symmetrical output stage with integrated under-voltage lockout (UVLO) protection and logic level enable control. It offers propagation delay of 55ns and 450mΩ source and sinks ON resistance per channel. This feature enables high switching frequencies with reduced switching losses of the power transistors.
Features of 2ED24427N01F Gate Driver
- 10 A sink and 10 A source driver capability (typical)
- 11.5 V under-voltage lockout
- 24 V maximum supply voltage
- Enable function
- CMOS Schmitt-triggered inputs
- Output in phase with the input
- 3.3 V, 5 V, and 15 V input logic compatible
- PSOIC-8 package with a thermal pad
Note: More technical information can be found in the 2ED24427N01F Datasheet linked at the bottom of this page and on the 2ED24427N01F product page.